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NE5500179A PDF File ( Datasheet )
NEC
NE5500179A-T1
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Anlinkda | 48,563 | 0.966 | Visit Site | ||
| SHENGYU ELECTRONICS | 12,379 | 0.9188 | Visit Site | ||
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| NE5500179A Description |
| SILICON POWER MOS FET
DATA SHEET
SILICON POWER MOS FET
NE5500179A
4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GH- 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 55% power
 NEC |
| SILICON POWER MOS FET
DATA SHEET
SILICON POWER MOS FET
NE5500179A
4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GH- 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 55% power
NEC |
| Related Part Number |
NE5534A | NE556D NE555P | NE545SNAS NE58633 | NE545BN |
| DataSheet.es | 2020 | Contacto |