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| NE3516S02 Description |
| N-Channel GaAs HJ-FET
Data Sheet
NE3516S02
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES
R09DS0038EJ0100 Rev.1.00 Apr 18, 2012
Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value) 4-pin Micro-X plastic (S02) package
APPLICATIONS
X to Ku band DBS LNB Other Ku band communication system
ORDERING INFORMATION
Part Number Order Number Package S
Renesas |
| Related Part Number |
NE3210S01 | NE3511S02 NE32500 | NE38018 NE325S01-T1B | NE334S01 |
| DataSheet.es | 2020 | Contacto |