DataSheet.es    

NE3516S02 PDF File ( Datasheet )

California Eastern Laboratories
NE3516S02-T1C-A
Trans JFET N-CH 4V 60mA 4-Pin Micro-X
Powered by Octopart



 



NE3516S02 Description
N-Channel GaAs HJ-FET

Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value) 4-pin Micro-X plastic (S02) package APPLICATIONS X to Ku band DBS LNB Other Ku band communication system ORDERING INFORMATION Part Number Order Number Package S

Renesas
Renesas




Related Part Number

NE3210S01  |  NE3511S02  

NE32500  |  NE38018  

NE325S01-T1B  |  NE334S01  



DataSheet.es    |   2020   |  Contacto