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NE325S01-T1 PDF File ( Datasheet )
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| NE325S01-T1 Description |
| C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz
Noise Figure, NF (dB)
NE325S01
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY
24 VDS = 2 V ID = 10 mA
GATE LENGTH: ≤ 0.20 m GATE WIDTH: 200 m LOW COST PLASTIC PACKAGE
Ga 16
1.0
12
0.5
8
DESCRIPTION
0
NF 1 2 4 6 8 10 14 20 4 30
The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.
 NEC |
| C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz
Noise Figure, NF (dB)
NE325S01
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY
24 VDS = 2 V ID = 10 mA
GATE LENGTH: ≤ 0.20 m GATE WIDTH: 200 m LOW COST PLASTIC PACKAGE
Ga 16
1.0
12
0.5
8
DESCRIPTION
0
NF 1 2 4 6 8 10 14 20 4 30
The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.
NEC |
| Related Part Number |
NE3503M04 | NE3210S01-T1B NE3514S02 | NE32584C NE38018-T2 | NE33284 |
| DataSheet.es | 2020 | Contacto |