NE25139U74 PDF File ( Datasheet )

GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER LOW CRSS: 0.02 pF (TYP) HIGH GPS: 20 dB (TYP) AT 900 MH- LOW NF: 1.1 dB TYP AT 900 MH- LG1 = 1.0 m, LG2 = 1.5 m, WG = 400 m ION IMPLANTATION AVAILABLE IN TAPE & REEL OR BULK Power Gain, GPS (dB) 20 NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MH- 5 NF 0 0 5 10 0 DESCRIPTION The NE251 is a dual gate GaAs FET