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NE25139 PDF File ( Datasheet )
California Eastern Laboratories
NE25139-T1-U73
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Microchip USA | 391 | Visit Site | |||
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| NE25139 Description |
| GENERAL PURPOSE DUAL-GATE GaAS MESFET
GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER LOW CRSS: 0.02 pF (TYP) HIGH GPS: 20 dB (TYP) AT 900 MH- LOW NF: 1.1 dB TYP AT 900 MH- LG1 = 1.0 m, LG2 = 1.5 m, WG = 400 m ION IMPLANTATION AVAILABLE IN TAPE & REEL OR BULK
Power Gain, GPS (dB)
20
NE25139
POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE
GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MH- 5
NF 0 0 5 10
0
DESCRIPTION
The NE251 is a dual gate GaAs FET
 NEC |
| GENERAL PURPOSE DUAL GATE GAAS MESFET
GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER LOW CRSS: 0.02 pF (TYP) HIGH GPS: 20 dB (TYP) AT 900 MH- LOW NF: 1.1 dB TYP AT 900 MH- LG1 = 1.0 m, LG2 = 1.5 m, WG = 400 m ION IMPLANTATION AVAILABLE IN TAPE & REEL OR BULK
Power Gain, GPS (dB)
20
NE25139
POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE
GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MH- 5
NF 0 0 5 10
0
DESCRIPTION
The NE251 is a dual gate GaAs FET
NEC |
| Related Part Number |
NE202XX | NE21987 NE25118-T1 | NE25139U72 NE202 | NE21908 |
| DataSheet.es | 2020 | Contacto |