NE21935 PDF File ( Datasheet )

NE21935 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. PACKAGE STYLE .100 4L PILL FEATURES INCLUDE: High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 mA 20 V 10 V 1.5 V 580 mW @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 80 °C, W 1 = BASE 3 = COLLECTOR 2& 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE C