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MTY55N20E PDF File ( Datasheet )
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MTY55N20E
Power Field-Effect Transistor, 55A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| SHENGYU ELECTRONICS | 7,970 | 0.7657 | Visit Site | ||
| Best Source | 1,555 | 4.8363 | Visit Site | ||
| Quest | 4 | 14.7 | Visit Site | ||
| NAC Semi | 44 | Visit Site | |||
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| MTY55N20E Description |
| TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY55N20E, D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY55N20E
Motorola Preferred Device
N Channel Enhancement Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supp
 Motorola Semiconductors |
| Related Part Number |
MTY100N10E | MTY20N50E MTY25N60E | MTY10N100E MTY30N50E | MTY14N100E |
| DataSheet.es | 2020 | Contacto |