MTP55N06Z PDF File ( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z, D Advance Information TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and othe