MTP3N50 PDF File ( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E, D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power