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| MTM20P08 Description |
| Power EFT
MOTOROLA
SEMICONDUCTOR~
TECHNICAL DATA
Designer’s Data sheet
Power Field Effect Transistor
P-Channel Enhancement Mode Silicon Gate TMOS
These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds Switching Times Specified at 100°C
Designer’s Data IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
Rugged SOA is Power Dissipation Limi
Motorola Semiconductors |
| Related Part Number |
MTM8N35 | MTMT8N40 MTM10N06E | MTMM-1xx-xx-L-D-xxx MTM50N05E | MTM12Pxx |
| DataSheet.es | 2020 | Contacto |