MTEA6C15J4 PDF File ( Datasheet )

CYStech Electronics Corp. Spec. No. : C938J4 Issued Date : 2013.12.04 Revised Date : 2013.12.30 Page No. : 1, 13 N & P-Channel Enhancement Mode Power MOSFET MTEA6C15J4 BVDSS ID @VGS=10V(-10V) Features Low gate charge Simple drive requirement ESD protected Pb-free lead plating and halogen-free package RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=6V(-6V) N-CH 150V 9.3A 163mΩ 177mΩ P-CH -150V -7.1A 283mΩ 308Ω Equivalent Circuit MTEA6C15J4 Outline TO-252-4L G：Gate D：Drain S：Source