MTEA0N10J3 PDF File ( Datasheet )

CYStech Electronics Corp. Spec. No. : C871J3 Issued Date : 2013.01.03 Revised Date : Page No. : 1, 10 N-Channel Enhancement Mode Power MOSFET MTEA0N10J3 BVDSS ID Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package RDSON(TYP) VGS=10V, ID=12A VGS=6V, ID=10A 100V 16A 83mΩ 100mΩ Equivalent Circuit MTEA0N10J3 Outline TO-252AB TO-252AA G：Gate D：Drain S：Source GDS G DS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source