|
| MTE300P10J3 Description |
| P-Channel Enhancement Mode Power MOSFET
Spec. No. : C136J3
CYStech Electronics Corp.
Issued Date : 2015.09.04 Revised Date :
P-Channel Enhancement Mode Power MOSFET
MTE300P10J3 BVDSS ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-5A
-100V -6.6A 368mΩ(typ)
Features
Low Gate Charge Simple Drive Requirement Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTE300P10J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTE300P10J3-0-T3-G
Package
TO-252 (Pb-free lead plating & hal
CYStech Electronics |
| Related Part Number |
MTE2D4N06F3 | MTEA6C15Q8 MTE016N15E3 | MTE3D5N06F3 MTEF1P15V8 | MTE1300W |
| DataSheet.es | 2020 | Contacto |