MTE030N10QJ3 PDF File ( Datasheet )

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTE030N10QJ3 Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 1, 9 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 25.3mΩ(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit MTE030N10QJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE030N10QJ3-0-T3-G Package Shipp