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MTD4N20E PDF File ( Datasheet )

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MTD4N20ET4
4 A 200 V 1.2 Ohm N-channel Si Power Mosfet

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MTD4N20E Description
TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD4N20E, D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD4N20E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applicati
Motorola Semiconductors
Motorola Semiconductors



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