|
| MTD20N06V Description |
| TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD20N06V, D
TMOS Power Field Effect Transistor DPAK for Surface Mount
TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low
Motorola Semiconductors |
| Related Part Number |
MTDN9946Q8 | MTDA0N10AV8 MTD07N04J3 | MTDN3154C6 MTD011N10RH8 | MTDN8810AT8 |
| DataSheet.es | 2020 | Contacto |