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MTD20N06V PDF File ( Datasheet )

VBsemi
MTD20N06VT4G-VB
N, 60V, 45A, Rds(on), 24M¦¸@10V, 28M¦¸@4.5V, 20VGS(¡ÀV), 1.8VTH(V) , TO252 Mosfet, Led
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MTD20N06V Description
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V, D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low

Motorola Semiconductors
Motorola Semiconductors




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