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| MTD030N10QJ3 Description |
| N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTD030N10QJ3
Spec. No. : C168J3 Issued Date : 2016.03.07 Revised Date : 2016.04.27 Page No. : 1, 9
BVDSS ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=10A
100V 29A 23mΩ(typ)
Features
Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package
Equivalent Circuit
MTD030N10QJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTD030N10QJ3-0-T3-G
Package
Shippin
Cystech Electonics |
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