MTBA6C15H8 PDF File ( Datasheet )

CYStech Electronics Corp. Spec. No. : C938H8 Issued Date : 2016.09.06 Revised Date : 2016.09.12 Page No. : 1, 14 N- And P-Channel Enhancement Mode MOSFET MTBA6C15H8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package N-CH 150V 2.4A 6.8A 172mΩ 178mΩ P-CH -150V -2.0A -5.8A 257mΩ 275mΩ Equivalent Circuit MTBA6