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| MTB5D0P03J3 Description |
| P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1, 9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03J3 BVDSS ID @VGS=-10V RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-10A
-30V -88A 3.7mΩ(typ)
5.1mΩ(typ)
Features
Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package
Equivalent Circuit
MTB5D0P03J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTB5D0P03J3-0-T3-G
Cystech Electonics |
| Related Part Number |
MTB080P06J3 | MTB20A04Q8 MTB028N10RNCQ8 | MTB6D0N03AH8 MTB090N06J3 | MTB040P04Q8 |
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