MTB050P10J3 PDF File ( Datasheet )

CYStech Electronics Corp. Spec. No. : C975J3 Issued Date : 2015.03.17 Revised Date : Page No. : 1, 9 P-Channel Enhancement Mode Power MOSFET MTB050P10J3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TC=100°C ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDS(ON)@VGS=-10V, ID=-15A Features RDS(ON)@VGS=-4.5V, ID=-12A Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Sym