MT4966 PDF File ( Datasheet )

MOS-TECH Semiconductor Co.,LTD MT4966 Dual N-Channel Powe MOSFET 100 V, 4.7 A, 102 mΩ Features Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has