MT48H16M32LF PDF File ( Datasheet )

512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF 8 Meg x 16 x 4 banks MT48H16M32LF, LG 4 Meg x 32 x 4 banks Features Endur-IC™ technology Fully synchronous; all signals registered on positive edge of system clock VDD = 1.7 1.95V; VDDQ = 1.7 1.95V Internal, pipelined operation; column address can be changed every clock cycle Four internal banks for concurrent operation Programmable burst lengths: 1, 2, 4, 8, and continuous1 Auto precharge, includes co

512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile LPSDR SDRAM MT48H32M16LF 8 Meg x 16 x 4 Banks MT48H16M32LF, LG 4 Meg x 32 x 4 Banks Features VDD, VDDQ = 1.7 1.95V Fully synchronous; all signals registered on positive edge of system clock Internal, pipelined operation; column address can be changed every clock cycle Four internal banks for concurrent operation Programmable burst lengths: 1, 2, 4, 8, and continuous Auto precharge, includes concurrent auto precharge Auto refr