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MT3S45T PDF File ( Datasheet )

Toshiba
MT3S45T
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

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MT3S45T Description
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION

MT3S45T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S45T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.1dB (@f=2GHz) High Gain:|S21e| =12.0dB (@f=2GHz) 2 Marking 3 R4 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratin
Toshiba Semiconductor
Toshiba Semiconductor



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