MT2312 PDF File ( Datasheet )

茂 半導體股 有限公司 Mos-Tech Semiconductor Co.,LTD. N-Channel Enhancement Mode Field Effect Transistor MT2312 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 4.5A 30@ VGS=4.5V 50@ VGS=2.5V NOTE：The MT2312 is available in a lead-free package D S G D G S ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Ga