MT1803 PDF File ( Datasheet )

MOS-TECH Semiconductor Co.,LTD 茂鈿半導體股 有限公司 N-Channel Enhancement Mode Field Effect Transistor MT1803 Features： VDS=30V ℃ID=60A(Tc=25 , VGS=10V) RDS(ON) 6.5mΩ @VGS=10V RDS(ON) 10mΩ @VGS=4.5V High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. Applications： Switching Applications. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage