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| MMBV105G Description |
| VOLTAGE VARIABLE CAPACITANCE DIODE
.
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current
Symbol VR
if .
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T, \ = 25°C Derate above 25°C
PD
Storage Temperature
T stg
Thermal Resistance Junction to Ambient
R &JA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 30 200
Max
350 2.8 150 357
Unit Vdc
mAdc
Unit
mW
mwrc
C °c, w
MMBV105G
CASE 318-02, 03, STYLE 8
SOT-23 (TO-236AA, AB)
VOLTAGE VARIABLE CAPACITANCE DIODE
ELECTRICAL CHARACTER
Motorola Semiconductors |
| Silicon Tuning Diode
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid state reliability in replacement of mechanical tuning methods. Controlled and Uniform Tuning Ratio
MMBV105GLT1
Motorola Preferred Device
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
3 Cathode
1 Anode
3
1 2
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Reverse Voltage
Forward
Motorola Semiconductors |
| Related Part Number |
MMBZ5223BS | MMBV3102LT1 MMBZ5258BW | MMBD6050-V MMBT2369 | MMBF170L |
| DataSheet.es | 2020 | Contacto |