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MMBT5088 PDF File ( Datasheet )

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MMBT5088LT1G
Bipolar (BJT) Single Transistor, NPN, 30 V, 50 mA, 225 mW, SOT-23, Surface Mount
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MMBT5088 Description
Silicon Epitaxial Planar Transistor

Production specification Silicon Epitaxial Planar Transistor FEATURES - Excellent HFE Linearity. - Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088, 5089 APPLICATIONS - This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50mA. ORDERING INFORMATION Type No. Marking MMBT5088 MMBT5089 1Q 1R SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collect

Galaxy Microelectronics
Galaxy Microelectronics
Low Noise NPN Transistor

Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dis s ipation FR -5 B oard (1) TA=25 C Derate above 2 5 C Thermal Res is tance, Junction to Ambient Total Device Dis s ipation Alumina S ubs trate, (2) T A=2 5 C Derate above 2 5 C Thermal Res is tance, Junction to Ambient J unction and S torage, Tem perature De

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WEITRON




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