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MMBT3906L PDF File ( Datasheet )

onsemi
MMBT3906LT1G
Transistor: PNP; bipolar; -40V; -0.2A; 300mW; -55+150 deg.C; SMD; SOT23
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MMBT3906L Description
PNP Small Signal Transistor

Small Signal Product MMBT3906L Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guara

Taiwan Semiconductor
Taiwan Semiconductor
General Purpose Transistor

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free, BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak (Note 3) THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC ICM

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