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MMBR4957LT1 PDF File ( Datasheet )

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MMBR4957LT1
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
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MMBR4957LT1 Description
PNP Silicon High-Frequency Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR4957LT1, D The RF Line PNP Silicon High-Frequency Transistor . . . designed for high gain, low noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin film circuits using surface mount components. High Gain Gpe = 17 dB Typ @ f = 450 MH- Low Noise NF = 3.0 dB Typ @ f = 450 MH- Available in tape and reel packaging options by adding suffix: T1 suffix = 3,000 units per reel T3 suffix = 10,000

Motorola Semiconductors
Motorola Semiconductors




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