MMBR4957 PDF File ( Datasheet )

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCEO VCBO V EB ic THERMAL CHARACTERISTICS Characteristic Symbol "Total Device Dissipation, Ta = 25°C Derate above 25°C PD Storage Temperature T stq Thermal Resistance Junction to Ambient R&JA Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 30 30 3.0 30 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW, °C °C °CA, V ELECTRICAL CHARACTERI

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR4957LT1, D The RF Line PNP Silicon High-Frequency Transistor . . . designed for high gain, low noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin film circuits using surface mount components. High Gain Gpe = 17 dB Typ @ f = 450 MH- Low Noise NF = 3.0 dB Typ @ f = 450 MH- Available in tape and reel packaging options by adding suffix: T1 suffix = 3,000 units per reel T3 suffix = 10,000