MMBF170LT1 PDF File ( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1, D TMOS FET Transistor N Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE 3 1 2 MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 ms) Drain Current Continuous Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) THERMAL CHARACTERISTICS Characteristic Total Devic

MMBF170LT1 Power MOSFET 500 mA, 60 V N Channel SOT 23 Features Pb Free Packages are Available MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 ms) Drain Current Continuous Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc 1 Unit http:, , onsemi.com 500 mA, 60 V RDS(on) = 5 W N Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR 5 Board (Note 1.)