MMBD914LT1 PDF File ( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD914LT1, D High-Speed Switching Diode 3 CATHODE 1 ANODE MMBD914LT1 Motorola Preferred Device 3 1 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 2 CASE 318 08, STYLE 8 SOT 23 (TO 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambi

MMBD914LT1 Preferred Device High Speed Switching Diode Features Pb Free Package is Available http:, , onsemi.com MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 3 Symbol PD Max 225 1.8 RqJA Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 417 55 to +150 PD 556 300 2.4 Unit