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| MMBD217SEW Description |
| SILICON EPITAXIAL PLANAR SWITCHING DIODE
MMBD217SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
3
Applications Ultra high speed switching
1 2
Marking Code: A7
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak Reverse Voltage
Symbol VRM VR IO IFM IFSM Pd TJ Ts
Value 80 80 100 300 4 200 150 - 55 to + 150
Unit V V mA mA A mW
O
Reverse Voltage Average Rectified Forward Current (Single) Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 s) Power Dissipation Junction Temperature Storage Temperatu
SEMTECH ELECTRONICS |
| Related Part Number |
MMBD4448DW | MMBD6050 MMBTA93LT1G | MMBZ5227BS MMBZ5223BW | MMBV3401LT1 |
| DataSheet.es | 2020 | Contacto |