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| MJE13005DF Description |
| EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement.
MJE13005DF
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature Storage
KEC |
| Related Part Number |
MJE13007 | MJE171 MJE13009 | MJE13003BRH MJE210G | MJE3055T |
| DataSheet.es | 2020 | Contacto |