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MIP2E4D PDF File ( Datasheet )

Panasonic
MIP2E4DMY
Silicon MOSFET type Integrated Circuit, 30W, 700V, TO-220-A2
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MIP2E4D Description
High-Performance IPD for Battery Chaegers

IPD I IPD (MIP022X) IPD PWM 60 W IPD I G ( 12 V, 3 A : 100 VAC : 100 VAC (MIP022X) : 1, 20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 G 0.3 W IPD MIP022X G I MOS FET VDSS MIP2E1D MIP2E2D MIP2E3D MIP2E4D MIP2E5D MIP2E7D ∼7W ∼ 10 W 10 W ∼ 20 W 15 W ∼ 30 W 20 W ∼ 40 W 40 W ∼ 60 W 700 V ILIMIT 0.4 A 0.5 A 1.0 A 1.5 A 2.0 A 3.0 A 100 kH- TO-220-A1 fOSC TO-220-A1, DIP8-A1(CF) MIP0222 MIP0223 MIP0224 MIP0225 MIP0227 IPD I R3 33 Ω 0.5W C6 390 pF 500 V L2 10 H 4A 12 V, 3 A D2 20

Matsushita
Matsushita
Silicon MOS type integrated circuit

(IPD) MIP2E4DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.1 0.2 0.8±0.1 VD VC ID IDP IC Tch Tstg 700 10 1.72 2.4 0.1 150 55 ∼ +150 V V A A A °C °C 2.54±0.3 5.08±0.5 1 2 3 1 : Control 2 : Source 3 : Drain TO-220-A1 Package : MIP2E4DMY I Control 1 3 Drain S R Q Q MOSFET Max Duty Clock Sawtooth S V-I R Q Q 2

Panasonic Semiconductor
Panasonic Semiconductor




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