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| MIP2E4D Description |
| High-Performance IPD for Battery Chaegers
IPD
I
IPD (MIP022X) IPD PWM 60 W IPD
I
G ( 12 V, 3 A : 100 VAC : 100 VAC (MIP022X) : 1, 20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60
G
0.3 W IPD MIP022X
G
I
MOS FET VDSS MIP2E1D MIP2E2D MIP2E3D MIP2E4D MIP2E5D MIP2E7D ∼7W ∼ 10 W 10 W ∼ 20 W 15 W ∼ 30 W 20 W ∼ 40 W 40 W ∼ 60 W 700 V ILIMIT 0.4 A 0.5 A 1.0 A 1.5 A 2.0 A 3.0 A 100 kH- TO-220-A1 fOSC TO-220-A1, DIP8-A1(CF) MIP0222 MIP0223 MIP0224 MIP0225 MIP0227 IPD
I
R3 33 Ω 0.5W C6 390 pF 500 V L2 10 H 4A 12 V, 3 A D2 20
Matsushita |
| Silicon MOS type integrated circuit
(IPD)
MIP2E4DMY
MOS
I
2.8±0.2 1.5±0.2
Unit : mm
10.5±0.5 9.5±0.2 8.0±0.2
6.7±0.3
4.5±0.2 1.4±0.1
I
15.4±0.3
φ 3.7±0.2
I
Ta = 25°C ± 3°C
13.5±0.5 4.2±0.3 Solder Dip
1.4±0.1
(9.3)
2.5±0.2 0.6 +0.1 0.2
0.8±0.1
VD VC ID IDP IC Tch Tstg
700 10 1.72 2.4 0.1 150 55 ∼ +150
V V A A A °C °C
2.54±0.3 5.08±0.5
1 2 3
1 : Control 2 : Source 3 : Drain TO-220-A1 Package
: MIP2E4DMY
I
Control 1 3
Drain
S R
Q Q MOSFET
Max Duty Clock Sawtooth
S V-I R
Q Q
2
Panasonic Semiconductor |
| Related Part Number |
MIP2M20MS | MIP9A04 MIP2K30MS | MIP2H2 MIP2M20MTSCF | MIP3E50MY |
| DataSheet.es | 2020 | Contacto |