LTC2312 PDF File ( Datasheet )

N-Channel 20V MOSFET LTC2312 Features: Surface-mounted package High Density Cell Design Halogen free Application Ultra Low On-Resistance BVDSS= 20V , RDS(ON)< 41mΩ@VGS= 4.5V RDS(ON)< 47mΩ@VGS= 2.5V RDS(ON)< 57mΩ@VGS= 1.8V ID= 4.9A Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted) Parameter Symbol Marking Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current(3) ℃Ta=25 ℃Ta=70 Pulsed Drain Current(1、2) Power Dissipation(1) Linear Derating Factor ℃

LTC2312-12 12-Bit, 500ksps Serial Sampling ADC in TSOT Features n 500ksps Throughput Rate n No Cycle Latency n Guaranteed 12-Bit No Missing Codes n Single 3V or 5V Supply n Low Noise: 73dB SNR n Low Power: 8mW at 500ksps and 3V Supply n Low Drift (20ppm, °C Maximum) 2.048V or 4.096V Internal Reference n Sleep Mode with < 1 A Typical Supply Current n Nap Mode with Quick Wake-Up < 1 Conversion n Separate 1.8V to 5V Digital I, O Supply n High Speed SPI-Compatible Serial I, O n Guarant