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| LDTDG12GPWT3G Description |
| Bias Resistor Transistor
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTDG12GPWT1G
zApplications Driver
zFeatures 1) High hFE.
300 (Min.) (VCE , IC=2V , 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC , IB=500mA , 5mA) 3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
We declare that the material of product compliance with
RoHS requirements.
zStructure NPN epitaxial plan
LRC |
| Related Part Number |
LDTC144TET1G | LDTC124GET1G LDTC125TET1G | LDTC143XET1G LDTC124TET1G | LDTC144VET1G |
| DataSheet.es | 2020 | Contacto |