KTC1003 PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Large Collector Current Capability- : IC= 4A (Max) ·Collector Power Dissipation- : PC= 30W(Max) APPLICATIONS ·Designed for B, W TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB

SEMICONDUCTOR TECHNICAL DATA KTC1003 EPITAXIAL PLANAR NPN TRANSISTOR B, W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. FEATURES Large Collector Current Capability. Large Collector Power Dissipation Capability. MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 200 60