KTA1666 PDF File ( Datasheet )

RoHS KTA1666 KTA1666 TRANSISTOR (PNP) SOT-89 DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage -2 A OV(BR)CBO: -50 V Operating and storage junction temperature range 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CTJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ ICParameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-1mA, IE=0 -50 V NColle

NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free KTA1666 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value -50 -50 -5 -2.0 0.5 150 -55 to 150 Unit V V V A W ˚C ˚C WEITRON http:, , www.weitron.com.tw 1, 3 05-Feb-09 KTA1666 ELECTRICAL CHARACTERISTI