|
| KSD5079 Description |
| Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5079
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability
APPLICATIONS ·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
10
A
ICP Collector Cur
Inchange Semiconductor |
| NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
New Jersey Semiconductor |
| Related Part Number |
KSD5071 | KSD203DC2 KSD5090 | KSD13003E KSD5075T | KSD210AC8 |
| DataSheet.es | 2020 | Contacto |