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| KSC5025 Description |
| Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5025
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800 V
VCEO
Collector-Emitter Voltage
500 V
VEBO
Emitter-Base Voltage
7V
IC Collector Curre
Inchange Semiconductor |
| High Voltage and High Reliabilty
KSC5025
KSC5025
High Voltage and High Reliabilty
High Speed Switching Wide SOA
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 800 500 7 15 25 4 100 150 - 55 ~
Fairchild Semiconductor |
| Related Part Number |
KSC5022 | KSC5029 KSC2330 | KSC2383OTA KSC5023 | KSC5030 |
| DataSheet.es | 2020 | Contacto |