|
| KSC2001 Description |
| NPN GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION)
Samsung semiconductor |
| General Purpose Applications
KSC2001
KSC2001
General Purpose Applications
High hFE and Low VCE (sat)
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 700 150 600 150 -55 ~ 150 Units V V V mA mA mW °C °C
Ele
Fairchild Semiconductor |
| Related Part Number |
KSC5022 | KSC5028 KSC13003H | KSC5026 KSC2330 | KSC2383OTA |
| DataSheet.es | 2020 | Contacto |