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KSC2001 PDF File ( Datasheet )

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KSC2001YBU
Bulk Through Hole NPN KSC2001 Bipolar (BJT) Transistor 135 @ 100mA 1V 700mA 600mW 170MHz
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KSC2001 Description
NPN GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION)

Samsung semiconductor
Samsung semiconductor
General Purpose Applications

KSC2001 KSC2001 General Purpose Applications High hFE and Low VCE (sat) 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 700 150 600 150 -55 ~ 150 Units V V V mA mA mW °C °C Ele

Fairchild Semiconductor
Fairchild Semiconductor




Related Part Number

KSC5022  |  KSC5028  

KSC13003H  |  KSC5026  

KSC2330  |  KSC2383OTA  



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