KDV348E PDF File ( Datasheet )

SEMICONDUCTOR VCO. FEATURES Low Series Resistance : rS=0.50 Small Package. (Max.) CATHODE MARK C 1 KDV348E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA E 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range Forward Current ) SYMBOL VR Tj Tstg IF RATING 10 150 -55¡- 150 ¡ mA 20 ¡ UNIT V D B A F 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10