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KDV245 PDF File ( Datasheet )
| KDV245 Description |
| VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV245
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1
G
FEATURES
High Capacitance Ratio : C0.5V, C2.5V =2.5(Typ.) Low Series Resistance : rs=0.35 Useful for Small Size Tuner. (Typ.)
K
A
H
E
2 D
J C I
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg RATING 10 150 -55 150 UNIT V
M M
DIM A B C D E F G H I J K L M
MILLIMETERS _ 0.1 2.5
.gif){kind=small} KEC(Korea Electronics) |
| VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV245E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
High Capacitance Ratio : C0.5V, C2.5V =2.5(Typ.) Low Series Resistance : rs=0.35 Useful for Small Size Tuner. (Typ.)
CATHODE MARK
FEATURES
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg RATING 10 150 -55 150 UNIT V
1. ANODE 2. CATHODE
B
A
DIM A B C D E F
MILLIMETERS _ 0.10 1.60 + _
KEC(Korea Electronics) |
| Related Part Number |
KDV386S | KDV301E KDV358 | KDV214A KDV302E | KDV358F |
| DataSheet.es | 2020 | Contacto |