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| KDV214A Description |
| SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES High Capacitance Ratio : C2V, C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 32 125
-55 125
UNIT V
KDV214A
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1. ANODE 2.
KEC |
| Related Part Number |
KDV350E | KDV804KS KDV258E | KDV365F KDV300E | KDV350F |
| DataSheet.es | 2020 | Contacto |