KDS3912 PDF File ( Datasheet )

SMD Type 100V Dual N-Channel PowerTrench MOSFET KDS3912 IC IC Features 3 A, 100 V. RDS(ON) = 125m RDS(ON) = 135m Low gate charge (14 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability @ VGS = 10 V @ VGS = 6 V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Dual Operation Power Dissipation