|
| KDS221E Description |
| SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.).
2 E
KDS221E
SILICON EPITAXIAL PLANAR DIODE
B D 3
DIM A B
C D E G H J
MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +
0.27+0.10, -0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 +
A
G
1
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junctio
KEC |
| Related Part Number |
KDS127E | KDS160V KDS123S | KDS114E KDS121V | KDS127U |
| DataSheet.es | 2020 | Contacto |