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| KDS190 Description |
| SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.92V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF(Typ.).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING
KEC |
| SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
KEC(Korea Electronics) |
| Related Part Number |
KDS112E | KDS120V KDS123V | KDS114V KDS123E | KDS135S |
| DataSheet.es | 2020 | Contacto |