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| KDS160V Description |
| SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small package : VSC. Low forward voltage. Fast reverse recovery time. Small total capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature
VRM VR IFM IO IFSM PD * Tj
85 80 300 100 2 100 150
Storage Temperature Range
Tstg -55 150
* : Mounted o
KEC |
| Related Part Number |
KDS112E | KDS120V KDS123V | KDS114V KDS125U | KDS160F |
| DataSheet.es | 2020 | Contacto |