K3799 PDF File ( Datasheet )

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3799 Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| = 6.0 S (typ.) Switching Regulator Applications - Low drain-source ON resistance - High forward transfer admittance - Low leakage current : IDSS = 100μA (max) (VDS = 720 V) - Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source volta